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| FDP100N10 N-Channel PowerTrench(R) MOSFET July 2007 FDP100N10 N-Channel Features * RDS(on) = 8.2m ( Typ.)@ VGS = 10V, ID = 75A * Fast switching speed * Low gate charge * High performance trench technology for extremely low RDS(on) * High power and current handing capability * RoHS compliant PowerTrench(R) tm MOSFET Description This N-Channel MOSFET is producedusing Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100V, 75A, 10m Applications * DC to DC converters / Synchronous Rectification D G G DS TO-220 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 75oC) - Pulsed (Note 1) (Note 2) (Note 3) Ratings 100 20 75 300 365 4.8 208 1.4 -55 to +175 300 Units V V A A mJ V/ns W W/oC o Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds C oC *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient Ratings 0.72 0.5 62.5 oC/W Units *When mounted on the minimum pad size recommended (PCB Mount) (c)2007 Fairchild Semiconductor Corporation FDP100N10 Rev. A1 1 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Device Marking FDP100N10 Device FDP100N10 Package TO-220 Reel Size Tape Width Quantity 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25 C VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 150oC VGS = 20V, VDS = 0V o 100 - 0.1 - 1 500 100 V V/oC A nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 75A VDS = 10V, ID = 37.5A (Note 4) 2.5 - 8.2 110 4.5 10 - V m S Dynamic Characteristics Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 50V, ID = 75A VGS = 10V (Note 4, 5) VDS = 25V, VGS = 0V f = 1MHz - 5500 530 220 76 30 20 7300 710 325 100 - pF pF pF nC nC nC Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 50V, ID = 75A VGS = 10V, RGEN = 25 (Note 4, 5) - 70 265 125 115 150 540 260 240 ns ns ns ns Drain-Source Diode Characteristics IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 75A VGS = 0V, ISD = 75A dIF/dt = 100A/s (Note 4) - 71 164 75 300 1.25 - A A V ns nC Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 0.13mH, IAS = 75A, VDD = 25V, RG = 25, Starting TJ = 25oC 3: ISD 75A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25oC 4: Pulse Test: Pulse width 300s, Duty Cycle 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP100N10 Rev. A1 2 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 500 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Figure 2. Transfer Characteristics 1000 ID,Drain Current[A] ID,Drain Current[A] 100 100 150 C -55 C 25 C o o o 10 10 *Notes: 1. 250s Pulse Test 2. TC = 25 C o *Notes: 1. VDS = 20V 2. 250s Pulse Test 5 0.1 1 5 1 VDS,Drain-Source Voltage[V] 2 4 6 8 10 VGS,Gate-Source Voltage[V] 12 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.020 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1000 RDS(ON) [], Drain-Source On-Resistance 0.015 IS, Reverse Drain Current [A] 100 150 C o 0.010 VGS = 10V VGS = 20V 10 25 C o 0.005 0.000 0 50 *Note: TJ = 25 C o *Notes: 1. VGS = 0V 100 150 200 250 ID, Drain Current [A] 300 350 1 0.2 2. 250s Pulse Test 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 5. Capacitance Characteristics 8000 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Figure 6. Gate Charge Characteristics 10 VDS = 80V VDS = 50V VDS = 25V 6000 8 Ciss *Note: 1. VGS = 0V 2. f = 1MHz Coss Capacitances [pF] 6 4000 4 2000 Crss 2 *Note: ID = 75A 0 0.1 1 10 VDS, Drain-Source Voltage [V] 30 0 0 15 30 45 60 75 Qg, Total Gate Charge [nC] 90 FDP100N10 Rev. A1 3 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 *Notes: 1. VGS = 10V 2. ID = 75A BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250A 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area 500 20s 100s 1ms 10ms Figure 10. Maximum Drain Current vs. Case Temperature 100 ID, Drain Current [A] 75 ID, Drain Current [A] 200 10 Operation in This Area is Limited by R DS(on) DC 50 1 *Notes: 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 25 0.1 1 10 100 VDS, Drain-Source Voltage [V] 0 25 50 75 100 125 o 150 TC, Case Temperature [ C] 175 Figure 11. Transient Thermal Response Curve 1 Thermal Response [ZJC] 0.5 0.2 0.1 0.1 0.05 0.02 PDM t1 t2 0.01 0.01 Single pulse *Notes: 1. ZJC(t) = 0.72 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZJC(t) o 1E-3 -5 10 10 -4 10 10 Rectangular Pulse Duration [sec] -3 -2 10 -1 10 0 FDP100N10 Rev. A1 4 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench(R) MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP100N10 Rev. A1 5 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench(R) MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP100N10 Rev. A1 6 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench(R) MOSFET Mechanical Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 FDP100N10 Rev. A1 7 www.fairchildsemi.com FDP100N10 N-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor and is not intended to be an exhaustive list of all such trademarks. Green FPSTM e-SeriesTM ACEx(R) POWEREDGE(R) GOTTM Build it NowTM Power-SPMTM i-LoTM CorePLUSTM PowerTrench(R) IntelliMAXTM CROSSVOLTTM Programmable Active DroopTM ISOPLANARTM CTLTM QFET(R) MegaBuckTM Current Transfer LogicTM QSTM MICROCOUPLERTM EcoSPARK(R) QT OptoelectronicsTM MicroFETTM Quiet SeriesTM FACT Quiet SeriesTM MicroPakTM RapidConfigureTM FACT(R) Motion-SPMTM SMART STARTTM FAST(R) OPTOLOGIC(R) SPM(R) FastvCoreTM (R) FPSTM OPTOPLANAR STEALTHTM FRFET(R) SuperFETTM PDP-SPMTM SuperSOTTM-3 Power220(R) Global Power ResourceSM SuperSOTTM-6 Green FPSTM Power247(R) owns or is authorized to use SuperSOTTM-8 SyncFETTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I29 No Identification Needed Full Production Obsolete Not In Production 8 FDP100N10 Rev. A1 www.fairchildsemi.com |
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